ELECTRON-MICROSCOPY STUDY OF THE AUGE/NI/AU CONTACTS ON GAAS AND GAALAS

被引：13

作者：

LILIENTAL, Z ^{[1
]}

CARPENTER, RW ^{[1
]}

ESCHER, J ^{[1
]}

机构：

[1] MOTOROLA INC,PHOENIX,AZ 85008

来源：

ULTRAMICROSCOPY | 1984年 / 14卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90118-9

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：135 / 143

页数：9

共 14 条

[1] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[2]

CASEY HC, 1978, HETEROSTRUCTURE LASE, P277

[3] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J].

CHRISTOU, A .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :141-&

[4]

Hayashi I., 1980, Journal of the Physical Society of Japan, V49, P57

[5]

HOLLAN L, 1980, CURRENT TOPICS MATER, V5, P1

[6]

KIM T, 1983 MAT RES SOC S P

[7] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS [J].

KINSBRON, E ;

GALLAGHER, PK ;

ENGLISH, AT .

SOLID-STATE ELECTRONICS, 1979, 22 (05) :517-&

[8] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J].

KUAN, TS ;

BATSON, PE ;

JACKSON, TN ;

RUPPRECHT, H ;

WILKIE, EL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6952-6957

[9]

LILIENTAL Z, 1983, THIN SOLID FILMS, V104, P17, DOI 10.1016/0040-6090(83)90545-X

[10] ON THE POINT AND LINE DEFECTS WHICH ARE COMMON TO BOTH DEGRADED LIGHT-EMITTING-DIODES AND PLASTICALLY DEFORMED GAAS [J].

LILIENTAL, Z .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2097-2102

← 1 2 →