TEMPERATURE-DEPENDENCE OF INTERFACE RECOMBINATION AND RADIATIVE RECOMBINATION IN (AL, GA)AS HETEROSTRUCTURES

被引：50
作者：
THOOFT, GW
VANOPDORP, C
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期
关键词：
D O I：
10.1063/1.94105
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：813 / 815
页数：3
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