PASSIVATION OF IMPURITIES AND RADIATION DEFECTS BY HYDROGEN IN P-TYPE SILICON

被引：0

作者：

MUKASHEV, BN

TOKMOLDIN, SZ

TAMENDAROV, MF

ABDULLIN, KA

CHIKHRAI, EV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：643 / 646

页数：4

共 21 条

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[8]

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[10] EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES [J].

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