ELECTRON TEMPERATURES IN SI-MOSFETS - DETERMINATION FROM BROAD-BAND FAR INFRARED-EMISSION

被引：15

作者：

HOPFEL, RA

VASS, E

GORNIK, E

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 49卷 / 05期

关键词：

D O I：

10.1016/0038-1098(84)90674-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：501 / 504

页数：4

相关论文

共 9 条

[1] ALLEN SJ, 1975, PHYS REV LETT, V35
[2] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +
[3] FAR INFRARED-EMISSION FROM HOT-ELECTRONS IN SI-INVERSION LAYERS
GORNIK, E
TSUI, DC
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 139 - 142
[4] FAR INFRARED CYCLOTRON EMISSION IN SEMICONDUCTORS
GORNIK, E
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1979, 11 (1-3) : 39 - 46
[5] ENERGY-LOSS OF WARM ELECTRONS AT THE INTERFACE OF (100) SILICON MOSFETS
HONLEIN, W
LANDWEHR, G
[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 260 - 266
[6] KAWAJI S, 1983, LECT NOTES PHYS, V177, P53
[7] HOT-ELECTRON ENERGY RELAXATION IN QUANTIZING MAGNETIC-FIELDS
MULLER, W
KOHL, F
PARTL, H
GORNIK, E
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 235 - 240
[8] PHONON-LIMITED ELECTRON-MOBILITY IN SI(100) INVERSION LAYER AT LOW-TEMPERATURES
SHINBA, Y
NAKAMURA, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (01) : 114 - 120
[9] VASS EM, UNPUB