MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON

被引：27
作者：
PANTELIDES, ST
IVANOV, I
SCHEFFLER, M
VIGNERON, JP
机构：
来源：
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词：
D O I：
10.1016/0378-4363(83)90220-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：18 / 27
页数：10
相关论文
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