PHOTOTHERMAL SPECTROSCOPY OF CDINGAS4 AND RELATED COMPOUND

被引：0
|
作者：
ANDO, S
KATO, K
SORAZAWA, M
TOYODA, T
机构：
[1] Univ of Electro-Communications, Tokyo
来源：
JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C7期
关键词：
D O I：
10.1051/jp4:1994745
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Photothermal spectroscopy using high sensitive thermistor is applied to study the heat generation of multinary compounds CdxInGaS3+x system (x=1,2,3) together with the optical absorption. There are differences between the photothermal spectra and optical energy absorption (1-T-R) in CdxInGaS3+x system and it depends on the composition x.
引用
收藏
页码：187 / 190
页数：4
相关论文
共 50 条
  • [31] Site symmetry of Er3+ in CdInGaS4 single crystal
    Choe, SH
    Park, HL
    Kim, WT
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 38 (02) : 155 - 157
  • [32] FAR-INFRARED REFLECTION SPECTRA OF CDINGAS4 SINGLE-CRYSTALS
    ALLAKHVERDIEV, KR
    ABBASOV, AN
    MEKHTIEV, TR
    NANI, RK
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01): : K31 - K34
  • [33] EXPONENTIAL ABSORPTION-EDGE IN THE SEMICONDUCTOR CDINGAS4 AT HIGH-TEMPERATURES
    TOYODA, T
    NAKANISHI, H
    ENDO, S
    IRIE, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (02) : L21 - L24
  • [34] Photoacoustic characterization of thermal and electronic transport properties of CdInGaS4 in a transmission detection configuration
    Shen, Q
    Toyoda, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (5B): : 3164 - 3168
  • [35] LOCALIZED LEVELS PARAMETERS IN CDINGAS4 SINGLE-CRYSTALS AS DETERMINED BY PHOTOCONDUCTIVITY MEASUREMENTS
    KAROUTIS, AD
    ANAGNOSTOPOULOS, AN
    MATERIALS RESEARCH BULLETIN, 1991, 26 (07) : 675 - 691
  • [36] FUNDAMENTAL ABSORPTION-EDGE IN THE SEMICONDUCTOR CDINGAS4 AT HIGH-TEMPERATURES
    TOYODA, T
    NAKANISHI, H
    ENDO, S
    IRIE, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (04) : 747 - 751
  • [37] PHOTOVOLTAIC EFFECT AND SPACE-CHARGE LIMITED CURRENTS IN CDINGAS4 SINGLE-CRYSTALS
    MOLDOVYAN, NA
    RADAUTSAN, SI
    RAYLYAN, VY
    ZHITAR, VF
    ARAMA, ED
    SOLAR ENERGY MATERIALS, 1987, 15 (01): : 37 - 43
  • [38] Photoacoustic characterization of thermal and electronic transport properties of CdInGaS4 in a transmission detection configuration
    Shen, Qing
    Toyoda, Taro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (5 B): : 3164 - 3168
  • [39] SHIFT OF THE FUNDAMENTAL ABSORPTION-EDGE OF CDINGAS4 AND CDINALS4 UNDER HYDROSTATIC-PRESSURE
    ABBASOV, AN
    ZAMANOVA, RA
    PANFILOV, VV
    SUBBOTIN, SI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 731 - 732
  • [40] CdInGaS4: An unexplored two- dimensional materials with desirable band gap for optoelectronic devices
    Mahdavifar, Zabiollah
    Shojaei, Fazel
    Journal of Alloys and Compounds, 2022, 854
12345