SEM EBIC CHARACTERIZATION OF DEGRADATION AT MIRRORS OF GAAS/ALGAAS LASER-DIODES

被引：2

作者：

JAKUBOWICZ, A

OOSENBRUG, A

机构：

[1] IBM Research Division, Zurich Research Laboratory

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 24卷 / 1-4期

关键词：

Semiconductor lasers;

D O I：

10.1016/0167-9317(94)90070-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser operation-induced migration of beryllium at mirrors of single quantum well, ridge geometry type GaAs/AlGaAs diode lasers was studied by electron-beam-induced current. In these devices an operation-induced displacement of the p-n junction towards the n-type cladding has been observed close to the mirrors. A similar effect was induced by electron-beam irradiation of the mirror facets in a scanning electron microscope. These effects have been attributed to recombination-enhanced diffusion/migration of beryllium from the p-type cladding. From the measured diffusion coefficient of beryllium we have estimated the average mirror temperature during laser operation, which was found to be in excellent agreement with measured temperatures published recently.

引用

页码：189 / 194

页数：6

共 14 条

[1]

Deppe, Appl. Phys. Lett., 56, (1990)

[2]

Chand, Chu, Jordan, Geva, Swaminathan, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10, (1992)

[3]

Nakajima, Ito, Nittono, Nagata, Technical Digest of Int'l Electron Device Meeting, pp. 673-676, (1990)

[4]

Hafizi, Pawlowicz, Tran, Umemoto, Streit, Oki, Kim, Yen, Technical Digest of GaAs IC Symposium, pp. 329-332, (1990)

[5]

Uematsu, Wada, Appl. Phys. Lett., 58, (1991)

[6]

Uematsu, Wada, Appl. Phys. Lett., 60, (1992)

[7]

Harder, Buchmann, Meier, Electronics Letters, 22, (1988)

[8]

Anthony, Et al., IEEE Journal of Quantum Electronics, 19 QE, 6, (1983)

[9]

Bona, Buchmann, Clauberg, Jaeckel, Vettiger, Voegeli, Webb, IEEE Photon. Technol. Lett., 3, (1991)

[10]

Buchmann, Dietrich, Sasso, Vettiger, Microelectronic Engineering, 9, (1988)

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