GENERAL RELATION BETWEEN REFRACTIVE-INDEX AND ENERGY-GAP IN SEMICONDUCTORS

被引：703

作者：

HERVE, P

VANDAMME, LKJ

机构：

[1] Department of Electrical Engineering, Eindhoven University of Technology

来源：

INFRARED PHYSICS & TECHNOLOGY | 1994年 / 35卷 / 04期

关键词：

D O I：

10.1016/1350-4495(94)90026-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A review is given of existing relations and rules of thumb between refractive index and energy pp in semiconductors. An error deviation was calculated on more than one hundred materials. With only one set of fitting parameters, our model n2 = 1 + [A/(E(g) + B)]2, based on the classical oscillator theory, gives good fit except for IV-VI materials like PbS, PbSe, PbTe. The constant A was found to have the same value as the hydrogen ionization energy i.e. 13.6 eV and B = 3.4 eV.

引用

页码：609 / 615

页数：7

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