MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE USING A CRACKED SELENIUM SOURCE

被引：38

作者：

CHENG, H

DEPUYDT, JM

HAASE, MA

POTTS, JE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / 186

页数：6

共 8 条

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