MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE USING A CRACKED SELENIUM SOURCE

被引：37
|
作者：
CHENG, H
DEPUYDT, JM
HAASE, MA
POTTS, JE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.584850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：181 / 186
页数：6
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