EPITAXY OF COSI2 ON SI (111) AT LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO 400-DEGREES-C)

被引：24

作者：

HADERBACHE, L

WETZEL, P

PIRRI, C

PERUCHETTI, JC

BOLMONT, D

GEWINNER, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.100456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1384 / 1386

页数：3

共 18 条

[1] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J].

CHAMBERS, SA ;

ANDERSON, SB ;

CHEN, HW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 34 (02) :913-920

[2]

DAVITAYA A, 1985, J VAC SCI TECHNOL B, V3, P770

[3] CO/SI(111) INTERFACE FORMATION AT ROOM-TEMPERATURE [J].

DERRIEN, J ;

DECRESCENZI, M ;

CHAINET, E ;

DANTERROCHES, C ;

PIRRI, C ;

GEWINNER, G ;

PERUCHETTI, JC .

PHYSICAL REVIEW B, 1987, 36 (12) :6681-6684

[4] ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111) [J].

GEWINNER, G ;

PIRRI, C ;

PERUCHETTI, JC ;

BOLMONT, D ;

DERRIEN, J ;

THIRY, P .

PHYSICAL REVIEW B, 1988, 38 (03) :1879-1884

[5] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J].

HENSEL, JC ;

LEVI, AFJ ;

TUNG, RT ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :151-153

[6] ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111) [J].

HENZ, J ;

OSPELT, M ;

VONKANEL, H .

SOLID STATE COMMUNICATIONS, 1987, 63 (06) :445-449

[7]

HUNT BD, 1986, MATER RES SOC S P, V56, P151

[8] SURFACE CHEMICAL-SHIFTS AND PHOTOELECTRON DIFFRACTION IN COSI2 [J].

LECKEY, R ;

RILEY, JD ;

JOHNSON, RL ;

LEY, L ;

DITCHEK, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01) :63-69

[9] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111) [J].

LIN, TL ;

FATHAUER, RW ;

GRUNTHANER, PJ ;

DANTERROCHES, C .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :804-806

[10] SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111) [J].

PIRRI, C ;

PERUCHETTI, JC ;

BOLMONT, D ;

GEWINNER, G .

PHYSICAL REVIEW B, 1986, 33 (06) :4108-4113

← 1 2 →