ELECTRONIC TRANSPORT-PROPERTIES OF EPITAXIAL ERBIUM SILICIDE SILICON HETEROSTRUCTURES

被引：77
作者：
DUBOZ, JY
BADOZ, PA
DAVITAYA, FA
CHROBOCZEK, JA
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 01期
关键词：
D O I：
10.1063/1.102392
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：84 / 86
页数：3
相关论文
共 14 条
[1]   INSULATING, METALLIC, OR SEMIMETALLIC ELECTRONIC NATURE OF XSI2 COMPOUNDS - APPLICATION TO WSI2 [J].
BADOZ, PA ;
ROSENCHER, E ;
TORRES, J ;
FISHMAN, G .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :890-895
[2]   FABRICATION AND STRUCTURE OF EPITAXIAL ER SILICIDE FILMS ON (111) SI [J].
DAVITAYA, FA ;
PERIO, A ;
OBERLIN, JC ;
CAMPIDELLI, Y ;
CHROBOCZEK, JA .
APPLIED PHYSICS LETTERS, 1989, 54 (22) :2198-2200
[3]   ELECTRICAL TRANSPORT-PROPERTIES IN EPITAXIAL CODEPOSITED COSI2 LAYERS ON (111) SI [J].
DUBOZ, JY ;
BADOZ, PA ;
ROSENCHER, E ;
HENZ, J ;
OSPELT, M ;
VONKANEL, H ;
BRIGGS, A .
APPLIED PHYSICS LETTERS, 1988, 53 (09) :788-790
[4]   EPITAXIAL-GROWTH OF RARE-EARTH SILICIDES ON (111) SI [J].
KNAPP, JA ;
PICRAUX, ST .
APPLIED PHYSICS LETTERS, 1986, 48 (07) :466-468
[5]  
KNAPP JA, 1986, MATER RES SOC S P, V54, P261
[6]   ELECTRONIC TRANSPORT-PROPERTIES OF TISI2 THIN-FILMS [J].
MALHOTRA, V ;
MARTIN, TL ;
MAHAN, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :10-16
[7]   Electronic transport and microstructure in MoSi2 thin films [J].
Martin, T. L. ;
Mahan, J. E. .
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) :493-502
[8]   ELECTRONIC TRANSPORT-PROPERTIES OF TUNGSTEN SILICIDE THIN-FILMS [J].
MARTIN, TL ;
MALHOTRA, V ;
MAHAN, JE .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) :309-325
[9]   THE SCHOTTKY-BARRIER HEIGHT OF THE CONTACTS BETWEEN SOME RARE-EARTH-METALS (AND SILICIDES) AND P-TYPE SILICON [J].
NORDE, H ;
DESOUSAPIRES, J ;
DHEURLE, F ;
PESAVENTO, F ;
PETERSSON, S ;
TOVE, PA .
APPLIED PHYSICS LETTERS, 1981, 38 (11) :865-867
[10]   MAGNETIC-PROPERTIES OF RARE-EARTH DISILICIDES RSI2 [J].
PIERRE, J ;
SIAUD, E ;
FRACHON, D .
JOURNAL OF THE LESS-COMMON METALS, 1988, 139 (02) :321-329
12