ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU

被引：31

作者：

NUESE, CJ ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 09期

关键词：

D O I：

10.1063/1.88244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：528 / 531

页数：4

共 18 条

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[2]

ENSTROM RE, TO BE PUBLISHED

[3]

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[4]

ENSTROM RE, 1973, 4 P INT S GALL ARS R, P37

[5] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J].

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NUESE, CJ ;

APPERT, JR ;

GANNON, JJ ;

ENSTROM, RE .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :37-66

[6] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J].

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PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :150-&

[7] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS [J].

KRESSEL, H ;

LOCKWOOD, HF ;

BUTLER, JK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4095-4097

[8] LOW-THRESHOLD LOC GAAS INJECTION LASERS [J].

KRESSEL, H ;

LOCKWOOD, HF ;

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1971, 18 (02) :43-&

[9] ROOM-TEMPERATURE LASER OPERATION OF INXGA1-X AS P-N-JUNCTIONS [J].

NUESE, CJ ;

ENSTROM, RE ;

ETTENBER.M .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :83-85

[10] VAPOR GROWTH OF IN1-XGAXP FOR P-N-JUNCTION ELECTROLUMINESCENCE .2. LUMINESCENCE CHARACTERISTICS [J].

NUESE, CJ ;

SIGAI, AG ;

ABRAHAMS, MS ;

GANNON, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :956-965

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