GROWTH AND PROPERTIES OF SI FILMS ON SAPPHIRE WITH PREDEPOSITED AMORPHOUS SI LAYERS

被引：12
作者：
ISHIDA, M
YASUDA, Y
OHYAMA, H
WAKAMATSU, H
ABE, H
NAKAMURA, T
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 12期
关键词：
D O I：
10.1063/1.336714
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：4073 / 4078
页数：6
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