共 15 条
- [1] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6169 - 6175BOURGUET, PDUPART, JMLETIRAN, EAUVRAY, PGUIVARCH, ASALVI, MPELOUS, GHENOC, P
- [2] EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 455 - 457DEXTER, RJPICRAUX, STWATELSKI, SB
- [3] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 952 - 954HEMMENT, PLFPEART, RFYAO, MFSTEPHENS, KGCHATER, RJKILNER, JAMEEKISON, DBOOKER, GRARROWSMITH, RP
- [4] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) : 292 - 297HEMMENT, PLFPEART, RFYAO, MFSTEPHENS, KGARROWSMITH, RPCHATER, RJKILNER, JA
- [5] THE FORMATION OF BURIED SI3N4 LAYERS IN SILICON BY HIGH-DOSE NITROGEN ION-IMPLANTATION[J]. THIN SOLID FILMS, 1983, 100 (03) : L25 - L28KREISSIG, USKORUPA, WHENSEL, E
- [6] EVALUATION OF GLANCING ANGLE X-RAY-DIFFRACTION AND MEV HE-4 BACKSCATTERING ANALYSES OF SILICIDE FORMATION[J]. THIN SOLID FILMS, 1974, 23 (02) : 205 - 213LAU, SSCHU, WKMAYER, JWTU, KN
- [7] SILICON-ON-INSULATOR BY OXYGEN IMPLANTATION WITH A STATIONARY BEAM[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 862 - 864MOGROCAMPERO, ALOVE, RPLEWIS, NHALL, EL
- [8] FORMATION OF SILICON-ON-INSULATOR STRUCTURES BY IMPLANTED NITROGEN[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2713 - 2721NESBIT, LSTIFFLER, SSLUSSER, GVINTON, H
- [9] TRANSMISSION ELECTRON-MICROSCOPY AND AUGER-ELECTRON SPECTROSCOPY OF SILICON-ON-INSULATOR STRUCTURES PREPARED BY HIGH-DOSE IMPLANTATION OF NITROGEN[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) : 4605 - 4613PETRUZZELLO, JMCGEE, TFFROMMER, MHRUMENNIK, VWALTERS, PACHOU, CJ
- [10] READ MH, 1964, 27TH ANN PITTSB DIFF