BURIED-OXIDE SILICON-ON-INSULATOR STRUCTURES .2. WAVE-GUIDE GRATING COUPLERS

被引：41
作者：
EMMONS, RM
HALL, DG
机构：
[1] Institute of Optics, University of Rochester, Rochester
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 01期
关键词：
D O I：
10.1109/3.119511
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Grating couplers formed in buried-oxide silicon-on-insulator structures are analyzed using both a convergent Bloch wave approach and a simple approximate method. Strong interface reflections that occur during grating coupling can cause interference effects which result in variations in coupling efficiency and coupling length by an order of magnitude when varying grating period and film thickness parameters. Results indicate that proper coupler design is essential in order to obtain efficient coupling.
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收藏
页码：164 / 175
页数：12
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