INFLUENCE OF BASE THICKNESS ON COLLECTOR BREAKDOWN IN ABRUPT ALINAS/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：19
作者：
JALALI, B
CHEN, YK
NOTTENBURG, RN
SIVCO, D
HUMPHREY, DA
CHO, AY
机构：
[1] AT & T Bell Laboratories, Murray Hill
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 09期
关键词：
D O I：
10.1109/55.62969
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the effect of base thickness on impact ionization in the collector of In0.53Ga0.47As heterostructure bipolar transistors (HBT’s) with abrupt Al0.48In0.52 As emitters. When the base thickness is less than the mean-free path for energy relaxation in the base, the avalanche process in the collector is enhanced by high-energy injection from the emitter. On the other hand, no such dependence is observed for long-base transistors with equilibrium base transport. These effects are expected as the emitter injection energy of 0.48 eV is appreciable compared to the impact ionization threshold of 0.83 eV in the InGaAs collector. © 1990 IEEE
引用
收藏
页码：400 / 402
页数：3
相关论文
共 8 条
[1]   THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].
ANDERSON, CL ;
CROWELL, CR .
PHYSICAL REVIEW B, 1972, 5 (06) :2267-&
[2]   NUMERICAL STUDY OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
BETON, PH ;
LEVI, AFJ .
APPLIED PHYSICS LETTERS, 1989, 55 (03) :250-252
[3]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[4]  
FRLEY CW, 1989, IEEE ELECTRON DEVICE, V10, P377
[5]   BASE DOPING LIMITS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].
JALALI, B ;
NOTTENBURG, RN ;
LEVI, AFJ ;
HAMM, RA ;
PANISH, MB ;
SIVCO, D ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1990, 56 (15) :1460-1462
[6]   NEAR-IDEAL LATERAL SCALING IN ABRUPT AL0.48IN0.52AS/IN0.53GA0.47AS HETEROSTRUCTURE BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
JALALI, B ;
NOTTENBURG, RN ;
CHEN, YK ;
LEVI, AFJ ;
SIVCO, D ;
CHO, AY ;
HUMPHREY, DA .
APPLIED PHYSICS LETTERS, 1989, 54 (23) :2333-2335
[7]   COLLECTOR BASE JUNCTION AVALANCHE EFFECTS IN ADVANCED DOUBLE-POLY SELF-ALIGNED BIPOLAR-TRANSISTORS [J].
LU, PF ;
CHEN, TC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) :1182-1188
[8]   NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS PROBED BY MAGNETIC-FIELD [J].
NOTTENBURG, RN ;
LEVI, AFJ ;
JALALI, B ;
SIVCO, D ;
HUMPHREY, DA ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1990, 56 (26) :2660-2662
1