SIMULATION OF SURFACE EVOLUTION DURING ION-BOMBARDMENT

被引：35
|
作者：
KATARDJIEV, IV [1 ]
机构：
[1] UNIV SALFORD, DEPT ELECTR & ELECT ENGN, SALFORD M5 4WT, LANCS, ENGLAND
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.575569
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：2434 / 2442
页数：9
相关论文
共 50 条
  • [1] EVOLUTION OF ATOMIC-SCALE SURFACE-STRUCTURES DURING ION-BOMBARDMENT - A FRACTAL SIMULATION
    SHAHEEN, MA
    RUZIC, DN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06): : 3085 - 3091
  • [2] DYNAMIC SIMULATION OF CHANGES IN NEAR-SURFACE COMPOSITION DURING ION-BOMBARDMENT
    ROUSH, ML
    ANDREADIS, TD
    DAVARYA, F
    GOKTEPE, OF
    APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 235 - 242
  • [3] SIMULATION OF DYNAMIC CHANGES IN NEAR-SURFACE COMPOSITION DURING ION-BOMBARDMENT
    ROUSH, ML
    ANDREADIS, TD
    DAVARYA, F
    GOKTEPE, OF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 135 - 140
  • [4] SURFACE MODIFICATION BY ION-BOMBARDMENT
    BISTEN, M
    FREISINGER, J
    LOB, H
    NEUMANN, P
    SCHARMANN, A
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (04): : 2390 - 2392
  • [5] PLASMON RADIATION OF SILVER SURFACE DURING ION-BOMBARDMENT
    BANDURIN, YA
    BELYKH, LS
    DASCHENKO, AI
    MITROPOLSKY, IE
    POP, SS
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1991, 55 (12): : 2399 - 2404
  • [6] SURFACE-TEMPERATURE MEASUREMENTS DURING ION-BOMBARDMENT
    CHU, TC
    CAMPISANO, SU
    TROVATO, A
    RADIATION EFFECTS LETTERS, 1983, 76 (04): : 131 - 136
  • [7] EVOLUTION OF DEFECT CLUSTERS AND DISLOCATION DENSITY DURING ION-BOMBARDMENT
    WOLFER, WG
    WEHNER, MF
    JOURNAL OF METALS, 1985, 37 (08): : A8 - A8
  • [8] SURFACE ROUGHENING UNDER ION-BOMBARDMENT
    BHATIA, CS
    THIN SOLID FILMS, 1982, 96 (03) : 249 - 256
  • [9] THE THEORY OF SURFACE EROSION BY ION-BOMBARDMENT
    SMITH, R
    CARTER, G
    NOBES, MJ
    PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1986, 407 (1833) : 405 - +
  • [10] THERMAL REGROWTH OF SILICON(111) SURFACE DURING ION-BOMBARDMENT
    YU, ML
    APPLIED PHYSICS LETTERS, 1982, 40 (11) : 986 - 987
12345