INVESTIGATION OF THE INITIAL-STAGES OF OXIDATION OF MICROCRYSTALLINE SILICON BY MEANS OF X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：19

作者：

GIMZEWSKI, JK ^{[1
]}

VEPREK, S ^{[1
]}

机构：

[1] UNIV ZURICH,INST INORGAN CHEM,CH-8057 ZURICH,SWITZERLAND

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 47卷 / 09期

关键词：

D O I：

10.1016/0038-1098(83)90648-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：747 / 751

页数：5

共 30 条

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[12]

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ROWE, JE .

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[14]

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[15] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J].

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VEPREK, S .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :163-165

[16]

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[17]

KAPLAN D, 1981, J PHYSIQUE C, V42

[18] BEHAVIOR OF PLASMONS IN AN AMORPHOUS SILICON-CARBON ALLOY SYSTEM STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

KATAYAMA, Y ;

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USAMI, K .

PHYSICAL REVIEW LETTERS, 1981, 46 (17) :1146-1149

[19]

KAZIMIERSKI LL, 1981, J VAC SCI TECHNOL, V18, P960

[20]

KAZIMIERSKI LL, 1980, APPL PHYS LETT, V36, P323

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