PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES

被引：225
作者：
HANSSON, GV
UHRBERG, RIG
机构：
来源：
SURFACE SCIENCE REPORTS | 1988年 / 9卷 / 5-6期
关键词：
D O I：
10.1016/0167-5729(88)90003-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：197 / 292
页数：96
相关论文
共 313 条
[1]   ELECTRONIC-STRUCTURE OF THE GE(111)-C(2X8) SURFACE [J].
AARTS, J ;
HOEVEN, AJ ;
LARSEN, PK .
PHYSICAL REVIEW B, 1988, 37 (14) :8190-8197
[2]   COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J].
ALLEN, FG ;
GOBELI, GW .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :597-&
[3]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[4]  
[Anonymous], ELECTRONIC STRUCTURE
[5]   SI(100) SURFACE RECONSTRUCTION - SPECTROSCOPIC SELECTION OF A STRUCTURAL MODEL [J].
APPELBAUM, JA ;
BARAFF, GA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1975, 35 (11) :729-732
[6]   SI (100) SURFACE .3. SURFACE RECONSTRUCTION [J].
APPELBAUM, JA ;
BARAFF, GA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1976, 14 (02) :588-601
[7]   THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].
APPELBAUM, JA ;
HAMANN, DR .
SURFACE SCIENCE, 1978, 74 (01) :21-33
[8]   SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1975, 12 (04) :1410-1417
[9]   THEORETICAL CALCULATIONS OF H INTERACTING WITH SI(100)1X1 [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1977, 15 (04) :2006-2011
[10]  
AUST HU, 1985, THESIS C ALBRECHTS U
12345678910