EFFECT OF ANNEALING METHOD UPON ANNEALING CHARACTERISTICS OF SUPERSATURATED SUBSTITUTIONAL GOLD IN SILICON

被引：15

作者：

MOROOKA, M

KITAGAWA, H

TOMOKAGE, H

HIROTA, S

YOSHIDA, M

机构：

[1] KYUSHU UNIV,DEPT ELECT ENGN,HIGASHI KU,FUKUOKA 812,JAPAN

[2] FUKUOKA UNIV,DEPT ELECTR,JONAN KU,FUKUOKA 81401,JAPAN

[3] NTT,ATSUGI ELECT COMMUN LAB,ATSUGI 24301,JAPAN

[4] KYUSHU INST DESIGN,MINAMI KU,FUKUOKA 815,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 01期

关键词：

D O I：

10.1143/JJAP.23.124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：124 / 125

页数：2

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[2]

GOSELE U, 1981, SEMICONDUCTOR SILICO, P766

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IRVIN, JC .

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[4] DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON [J].

KITAGAWA, H ;

HASHIMOTO, K ;

YOSHIDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :276-280

[5] NOTE ON THE ANALYSIS OF DLTS AND C2-DLTS [J].

TOMOKAGE, H ;

NAKASHIMA, H ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1982, 21 (01) :67-70