ON THE THERMAL EVOLUTION OF PHOTOCONDUCTIVITY IN BULK FE-DOPED SEMI-INSULATING INP

被引：5

作者：

JIMENEZ, J ^{[1
]}

GONZALEZ, MA ^{[1
]}

CARBAYO, V ^{[1
]}

BONNAFE, J ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 01期

关键词：

D O I：

10.1002/pssa.2210770166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K69 / K73

页数：5

共 10 条

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[4]

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[5] ON THE PHOTOCONDUCTIVITY RESPONSE OF GAAS DOPED WITH CHROMIUM AND OXYGEN [J].

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[6] OPTICAL AND ESR ANALYSIS OF FE ACCEPTOR IN INP [J].

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[10] A MODEL FOR THE - 1.10EV EMISSION BAND IN INP [J].

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