MODIFIED PALLADIUM METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH INCREASED AMMONIA GAS SENSITIVITY

被引：94

作者：

WINQUIST, F

SPETZ, A

ARMGARTH, M

NYLANDER, C

LUNDSTROM, I

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：839 / 841

页数：3

共 9 条

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[6] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].

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[7]

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[8] DETECTION OF H2S WITH PD-GATE MOS FIELD-EFFECT TRANSISTORS [J].

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[9]

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