PRECISE PROFILES FOR ARSENIC IMPLANTED IN SI AND SIO2 OVER A WIDE IMPLANTATION ENERGY-RANGE (10 KEV-2.56 MEV)

被引：25
作者：
NAKATA, J
KAJIYAMA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 09期
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D O I：
10.1143/JJAP.21.1363
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1363 / 1369
页数：7
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共 17 条
  • [1] CHU WK, 1978, BACKSCATTERING SPECT, P50
  • [2] RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON
    DAVIES, DE
    [J]. CANADIAN JOURNAL OF PHYSICS, 1969, 47 (16) : 1750 - &
  • [3] FAIRFIELD JM, 1969, T METALL SOC AIME, V245, P469
  • [4] GIBBONS JF, 1975, PROJECTED RANGE STAT
  • [5] IWAKI M, 1973, 3RD P INT C ION IMPL, P111
  • [6] DESCRIPTION OF ARSENIC AND BORON PROFILES IMPLANTED IN SIO2,SI3N4 AND SI USING PEARSON DISTRIBUTIONS WITH 4 MOMENTS
    JAHNEL, F
    RYSSEL, H
    PRINKE, G
    HOFFMANN, K
    MULLER, K
    BIERSACK, J
    HENKELMANN, R
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 223 - 229
  • [7] KALBITZER S, 1978, 1ST P INT C ION BEAM, P3
  • [8] ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON
    MULLER, H
    KRANZ, H
    RYSSEL, H
    SCHMID, K
    [J]. APPLIED PHYSICS, 1974, 4 (02): : 115 - 123
  • [9] OETZMANN H, 1978, 1ST P INT C ION BEAM, P113
  • [10] REDDI VGK, 1972, SOLID STATE TECHNOL, V15, P35
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