MORPHOLOGY OF GAAS AND INP (001) SUBSTRATES AFTER DIFFERENT PREPARATION PROCEDURES PRIOR TO EPITAXIAL-GROWTH

被引：10
|
作者：
SALETES, A
TURCO, F
MASSIES, J
CONTOUR, JP
机构：
[1] CNRS-Sophia Antipolis, Valbonne, Fr, CNRS-Sophia Antipolis, Valbonne, Fr
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 02期
关键词：
D O I：
10.1149/1.2095645
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
26
引用
收藏
页码：504 / 509
页数：6
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