MODELING JOSEPHSON JUNCTIONS

被引：66

作者：

MCDONALD, DG ^{[1
]}

JOHNSON, EG ^{[1
]}

HARRIS, RE ^{[1
]}

机构：

[1] NBS,BOULDER,CO 80302

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.13.1028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1028 / 1031

页数：4

共 14 条

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[2] 1.4 MIL2 MEMORY CELL WITH JOSEPHSON JUNCTIONS [J].

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PHYSICAL REVIEW LETTERS, 1973, 31 (08) :524-527

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HASSELBE.LE ;

LEVINSEN, MT ;

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PHYSICAL REVIEW B, 1974, 9 (09) :3757-3765

[6] RENORMALIZATION OF EXPRESSION FOR SUPERCONDUCTING TUNNELLING CURRENTS [J].

HASSELBERG, LE .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 4 (09) :1433-1446

[7] SINGLE-CRYSTAL SILICON-BARRIER JOSEPHSON JUNCTIONS [J].

HUANG, CL ;

VANDUZER, T .

IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) :766-769

[8] JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS [J].

HUANG, CL ;

VANDUZER, T .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :753-756

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BARDEEN, J .

PHYSICAL REVIEW, 1958, 111 (02) :412-417

[10] VORTEX STRUCTURE AND CRITICAL CURRENTS IN JOSEPHSON JUNCTIONS [J].

OWEN, CS ;

SCALAPINO, DJ .

PHYSICAL REVIEW, 1967, 164 (02) :538-+

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