A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：56
作者：
STALL, RA
WOOD, CEC
BOARD, K
DANDEKAR, N
EASTMAN, LF
DEVLIN, J
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
[2] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期
关键词：
D O I：
10.1063/1.329254
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4062 / 4069
页数：8
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