THE BISTABILITY EFFECT IN RESONANT-TUNNELING PHOTOTRANSISTORS WITH MULTIPLE-QUANTUM-WELL STRUCTURE

被引：6
作者：
RYZHII, V
机构：
[1] Univ of Aizu, Aizu Wakamatsu, Japan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 06期
关键词：
D O I：
10.1088/0268-1242/9/6/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bistable operation of resonant-tunnelling phototransistors incorporating a multiple quantum well base (RTQWPT) is reported. The mechanism of operation is resonant-tunnelling hot-electron injection controlled by electron photoemission from the multiple quantum well base into the collector. The RTQWPT utilizes intersubband optical absorption in the infrared region of the spectrum. The RTQWPT can be used as a high-efficiency optoelectronic switch controlled by infrared radiation and an infrared photodetector.
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页码：1209 / 1214
页数：6
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