QUANTUM CONFINEMENT EFFECTS IN STRAINED SILICON-GERMANIUM ALLOY QUANTUM-WELLS

被引：68
|
作者：
XIAO, X
LIU, CW
STURM, JC
LENCHYSHYN, LC
THEWALT, MLW
GREGORY, RB
FEJES, P
机构：
[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA
[2] MOTOROLA INC,ADV RES CTR,MESA,AZ 85202
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期
关键词：
D O I：
10.1063/1.107061
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si(1-x)Ge(x)/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 angstrom in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6 X 6 Luttinger-Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.
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收藏
页码：2135 / 2137
页数：3
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