CARRIER RELAXATION IN AMORPHOUS-SILICON WITH OPTICAL BIAS

被引：4

作者：

KRISTENSEN, IK

HVAM, JM

机构：

[1] Odense Univ, Odense, Den, Odense Univ, Odense, Den

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90732-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：611 / 614

页数：4

共 8 条

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[5] OPTICAL BIAS CONTROL OF DISPERSIVE RELAXATIONS IN ALPHA-SI-H [J].

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VARDENY, Z ;

TAUC, J .

PHYSICAL REVIEW LETTERS, 1984, 52 (05) :376-379

[6] TRAP-CONTROLLED DISPERSIVE TRANSPORT AND EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON [J].

SCHIFF, EA .

PHYSICAL REVIEW B, 1981, 24 (10) :6189-6192

[7]

TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49

[8] DISPERSIVE AND NONDISPERSIVE TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN PRESENCE OF BIAS ILLUMINATION [J].

ZELDOV, E ;

WEISER, K .

PHYSICAL REVIEW LETTERS, 1984, 53 (10) :1012-1015

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