BARRIER INHOMOGENEITIES AT SCHOTTKY CONTACTS

被引：1475
作者：
WERNER, JH
GUTTLER, HH
机构：
[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 03期
关键词：
D O I：
10.1063/1.347243
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so-called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.
引用
收藏
页码：1522 / 1533
页数：12
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