REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE

被引：44

作者：

GOSSMANN, HJ ^{[1
]}

FELDMAN, LC ^{[1
]}

GIBSON, WM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.53.294

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：294 / 297

页数：4

共 16 条

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[9]

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[10]

GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

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