TITANIUM GETTERING IN SILICON - INVESTIGATION BY DEEP LEVEL TRANSIENT SPECTROSCOPY AND SECONDARY ION MASS-SPECTROSCOPY

被引：4

作者：

LEO, K ^{[1
]}

SCHINDLER, R ^{[1
]}

KNOBLOCH, J ^{[1
]}

VOSS, B ^{[1
]}

机构：

[1] FRAUNHOFER INST SOLARE ENERGIESYST,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3472 / 3474

页数：3

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