TITANIUM GETTERING IN SILICON - INVESTIGATION BY DEEP LEVEL TRANSIENT SPECTROSCOPY AND SECONDARY ION MASS-SPECTROSCOPY

被引：4
作者：
LEO, K [1 ]
SCHINDLER, R [1 ]
KNOBLOCH, J [1 ]
VOSS, B [1 ]
机构：
[1] FRAUNHOFER INST SOLARE ENERGIESYST,D-7800 FREIBURG,FED REP GER
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期
关键词：
D O I：
10.1063/1.339292
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3472 / 3474
页数：3
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