W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

被引：2

作者：

Xu Peng ^{[1
]}

Song Xubo ^{[1
]}

Lu Yuanjie ^{[1
]}

Wang Yuangang ^{[1
]}

Dun Shaobo ^{[1
]}

Yin Jiayun ^{[1
]}

Fang Yulong ^{[1
]}

Gu Guodong ^{[1
]}

Feng Zhihong ^{[1
]}

Cai Shujun ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Hebei, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 08期

基金：

中国国家自然科学基金;

关键词：

W-band; MMIC; GaN; power amplifier;

D O I：

10.1088/1674-4926/36/8/085009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator. The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode, with an associated power added efficiency of 5.4% and an associated power gain of 6.1 dB. The power density is 459 mW/mm. Moreover, the MMIC PA offers over 100 mW in the 83-90 GHz bandwidth. Those performances were measured at drain bias of 12 V.

引用

页数：3

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