GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES

被引：54
作者：
ING, SW
DAVERN, W
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 03期
关键词：
D O I：
10.1149/1.2423524
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：284 / &
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