STUDY OF OXYGEN INCORPORATION IN ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：33

作者：

ACHTNICH, T ^{[1
]}

BURRI, G ^{[1
]}

ILEGEMS, M ^{[1
]}

机构：

[1] UNIV LAUSANNE,INST EXPTL PHYS,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575793

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2537 / 2541

页数：5

共 8 条

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[6] ROLE OF THIN MULTIQUANTUM WELLS IN CONTROLLING INTRINSIC INTERFACE QUALITY IN MOLECULAR-BEAM EPITAXIALLY GROWN HETEROSTRUCTURES [J].

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[7] EFFECT OF GROWTH TEMPERATURE ON THE PHOTO-LUMINESCENT SPECTRA FROM SN-DOPED GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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