CVD IN STAGNATION POINT FLOW - AN EVALUATION OF THE CLASSICAL 1D-TREATMENT

被引：132

作者：

HOUTMAN, C ^{[1
]}

GRAVES, DB ^{[1
]}

JENSEN, KF ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 05期

关键词：

D O I：

10.1149/1.2108777

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：961 / 970

页数：10

共 24 条

[1] CATALYTIC COMBUSTION IN A STAGNATION POINT BOUNDARY-LAYER [J].

ABLOW, CM ;

SCHECHTER, S ;

WISE, H .

COMBUSTION SCIENCE AND TECHNOLOGY, 1980, 22 (3-4) :107-117

[2]

Baker A. J., 1983, FINITE ELEMENT COMPU

[3]

Bird R. B., 1960, TRANSPORT PHENOMENA

[4] STAGNATION-POINT VISCOUS-FLOW OF AN INCOMPRESSIBLE FLUID BETWEEN POROUS PLATES WITH UNIFORM BLOWING [J].

CHAPMAN, TW ;

BAUER, GL .

APPLIED SCIENTIFIC RESEARCH, 1975, 31 (03) :223-239

[5] MASS-TRANSFER TO AN IMPINGING JET ELECTRODE [J].

CHIN, DT ;

TSANG, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1461-1470

[6] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J].

COX, HM .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :641-643

[7]

GRESHO PM, 1981, RECENT ADV NUMERICAL, V1, P27

[8] HETEROGENEOUS KINETICS AND MASS-TRANSFER IN CHEMICAL VAPOR-DEPOSITION PROCESSES .3. THE ROTATING-DISK REACTOR [J].

HITCHMAN, ML ;

CURTIS, BJ .

JOURNAL OF CRYSTAL GROWTH, 1982, 60 (01) :43-56

[9] FRONTAL SOLUTION PROGRAM FOR UNSYMMETRIC MATRICES [J].

HOOD, P .

INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING, 1976, 10 (02) :379-399

[10] THERMAL-DIFFUSION EFFECTS IN CHEMICAL VAPOR-DEPOSITION REACTORS [J].

JENKINSON, JP ;

POLLARD, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2911-2917

← 1 2 3 →