DEPENDENCE OF MISFIT DISLOCATION VELOCITIES UPON GROWTH TECHNIQUE AND OXYGEN-CONTENT IN STRAINED GEXSI1-X/SI(100) HETEROSTRUCTURES

被引：11

作者：

HULL, R ^{[1
]}

BEAN, JC ^{[1
]}

NOBLE, D ^{[1
]}

HOYT, J ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 13期

关键词：

D O I：

10.1063/1.106292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Misfit dislocation velocities in strained GexSi1-x/Si(100) heterostructures are compared for layers grown by molecular beam epitaxy and limited reaction processing. We demonstrate that velocities are substantially lower in structures with oxygen concentrations approximately 10(20) cm-3 compared to layers with oxygen concentrations approximately 10(18) cm-3. For layers with the lower oxygen concentration, the sample growth technique does not appear to be a significant factor affecting misfit dislocation velocity.

引用

页码：1585 / 1587

页数：3

共 17 条

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