MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES

被引：56

作者：

SAUER, R ^{[1
]}

WEBER, J ^{[1
]}

机构：

[1] UNIV STUTTGART,PHYS INST,D-7 STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.36.48

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：48 / 51

页数：4

共 13 条

[1] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON [J].

CHERLOW, JM ;

AGGARWAL, RL ;

LAX, B .

PHYSICAL REVIEW B, 1973, 7 (10) :4547-4560

[2] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].

DEAN, PJ ;

FAULKNER, RA ;

KIMURA, S ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1971, 4 (06) :1926-&

[3] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[4] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[5]

KAMINSKII AS, 1970, PISMA ESKP TEOR FIZ, V11, P381

[6]

KAMINSKY AS, 1970, JETP LETT, V11, P225

[7] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[8] VIBRONIC COUPLING IN SEMICONDUCTORS - DYNAMIC JAHN-TELLER EFFECT [J].

MORGAN, TN .

PHYSICAL REVIEW LETTERS, 1970, 24 (16) :887-&

[9] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J].

SAUER, R .

PHYSICAL REVIEW LETTERS, 1973, 31 (06) :376-379

[10]

SAUER R, 1974, 12TH P INT C PHYS SE, P42

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