NOVEL INSB PHOTOCHEMICAL NATIVE OXIDE INTERFACE

被引:9
作者
KEPTEN, A
SHACHAMDIAMAND, Y
SCHACHAM, SE
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10.1063/1.341589
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O59 [应用物理学];
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页码:2813 / 2815
页数:3
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共 15 条
[1]  
ADAR R, UNPUB
[2]   COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS [J].
ANDERSON, GW ;
SCHMIDT, WA ;
COMAS, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :424-430
[3]   THE PHOTOCHEMICAL OXIDATION OF GAAS [J].
BERTRAND, PA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :973-976
[4]   QUANTITATIVE AUGER ANALYSIS BY DEPTH PROFILING OF LINE-SHAPES - APPLICATION TO NATIVE OXIDE-INSB INTERFACES [J].
BREGMAN, J ;
SHAPIRA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :959-963
[5]  
FOULER AM, 1987, OPT ENG, V26, P232
[6]  
GIBBONS MD, 1983, P SPIE, V433, P151
[7]   ELECTRICAL-PROPERTIES OF INSB METAL-INSULATOR SEMICONDUCTOR DIODES PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].
HUANG, KF ;
SHIE, JS ;
LUO, JJ ;
CHEN, JS .
THIN SOLID FILMS, 1987, 151 (02) :145-152
[8]   CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].
LANGAN, JD ;
VISWANATHAN, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477
[9]  
NICOLLIAN EH, 1982, MOS PHYSICAL TECHNOL
[10]   HYSTERESIS FREE SIO2/INSB METAL-INSULATOR-SEMICONDUCTOR DIODES [J].
OKAMURA, M ;
MINAKATA, M .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2060-2066