EFFECT OF THE TE/SI RATIO ON THE ELECTRICAL CHARACTERISTICS OF THE AMORPHOUS-CHALCOGENIDE SWITCHES

被引：1

作者：

ELFOULY, MH

MORSY, AM

AMMAR, AH

MAGED, AF

AMER, HH

机构：

[1] CAIRO UNIV,FAC SCI,DEPT PHYS,BENI SUEF,EGYPT

[2] ELAZHAR UNIV,FAC ENGN,DEPT ELECT ENGN,CAIRO,EGYPT

来源：

JOURNAL OF MATERIALS SCIENCE | 1989年 / 24卷 / 07期

关键词：

D O I：

10.1007/BF01174509

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2444 / 2448

页数：5

相关论文

共 10 条

[1] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS
ADLER, D
HENISCH, HK
MOTT, N
[J]. REVIEWS OF MODERN PHYSICS, 1978, 50 (02) : 209 - 220
[2] AFIFI MA, 1979, J PHYS, V10, P5
[3] HENISCH HK, 1974, GARMISCH, P567
[4] NEW EXPERIMENTS ON THRESHOLD SWITCHING IN CHALCOGENIDE AND NON-CHALCOGENIDE ALLOYS
HOMMA, K
HENISCH, HK
OVSHINSKY, SR
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 1105 - 1110
[5] MAGED AF, 1987, THESIS MONOUFIA U EG
[6] MOBILITY OF PHOTOINDUCED CARRIERS IN DISORDERED AS2TE3 AND AS30TE48SI12GE10
MARSHALL, JM
OWEN, AE
[J]. PHILOSOPHICAL MAGAZINE, 1975, 31 (06): : 1341 - 1356
[7] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
DAVIS, EA
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996
[8] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &
[9] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +
[10] LOCAL STRUCTURE, BONDING, AND ELECTRONIC PROPERTIES OF COVALENT AMORPHOUS-SEMICONDUCTORS
OVSHINSKY, SR
ADLER, D
[J]. CONTEMPORARY PHYSICS, 1978, 19 (02) : 109 - 126