DETERMINATION OF DOPANT AND DEEP IMPERFECTION PROFILES IN P-TYPE CDTE BY IMPROVED CONSTANT CAPACITANCE-VOLTAGE TRANSIENT MEASUREMENTS

被引：13

作者：

SHIAU, JJ

FAHRENBRUCH, AL

BUBE, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1340 / 1347

页数：8

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