共 50 条
- [45] A new technique for designing high-performance monolithically integrated In0.53Ga0.47As/InP p-i-n/FET front-end optical receiver MELECON '96 - 8TH MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, PROCEEDINGS, VOLS I-III: INDUSTRIAL APPLICATIONS IN POWER SYSTEMS, COMPUTER SCIENCE AND TELECOMMUNICATIONS, 1996, : 1313 - 1316
- [47] Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer Journal of Communications Technology and Electronics, 2018, 63 : 1119 - 1126
- [49] LIGHT-ION-BOMBARDED P-TYPE IN0.53GA0.47AS JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4755 - 4759