A LONG-WAVELENGTH, ANNULAR IN0.53GA0.47AS P-I-N PHOTODETECTOR

被引：6
|
作者：
FORREST, SR [1 ]
KOHL, PA [1 ]
PANOCK, R [1 ]
DEWINTER, JC [1 ]
NAHORY, RE [1 ]
YANOWSKI, E [1 ]
机构：
[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期
关键词：
D O I：
10.1109/EDL.1982.25619
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：415 / 417
页数：3
相关论文
共 50 条
  • [1] Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates
    Jang, JH
    Cueva, G
    Dumka, DC
    Hoke, WE
    Lemonias, PJ
    Adesida, I
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (02) : 151 - 153
  • [2] Simulation and Optimization of p-i-n In0.53Ga0.47As/InP photodetector
    Zhu, Min
    Chen, Jun
    Lv, Jiabing
    Tang, Hengjing
    Li, Xue
    AOPC 2015: OPTICAL AND OPTOELECTRONIC SENSING AND IMAGING TECHNOLOGY, 2015, 9674
  • [3] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER
    LEHENY, RF
    NAHORY, RE
    POLLACK, MA
    BALLMAN, AA
    BEEBE, ED
    DEWINTER, JC
    MARTIN, RJ
    ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355
  • [4] Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD
    王琦
    吕吉贺
    焦德平
    周静
    黄辉
    苗昂
    蔡世伟
    黄永清
    任晓敏
    Chinese Optics Letters, 2007, (06) : 358 - 360
  • [5] Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD
    Wang, Qi
    Lv, Jihe
    Xiong, Deping
    Zhou, Jing
    Huang, Hui
    Miao, Ang
    Cai, Shiwei
    Huang, Yongqing
    Ren, Xiaomin
    CHINESE OPTICS LETTERS, 2007, 5 (06) : 358 - 360
  • [6] Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
    X. D. Wang
    W. D. Hu
    X. S. Chen
    W. Lu
    H. J. Tang
    T. Li
    H. M. Gong
    Optical and Quantum Electronics, 2008, 40 : 1261 - 1266
  • [7] Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes
    Gaur, Abhinav
    Filmer, Matthew
    Thomas, Paul
    Bhatnagar, Kunal
    Droopad, Ravi
    Rommel, Sean
    SOLID-STATE ELECTRONICS, 2015, 111 : 234 - 237
  • [8] VERY-HIGH-BANDWIDTH IN0.53GA0.47AS P-I-N DETECTOR ARRAYS
    LIU, Y
    FORREST, SR
    TANGONAN, GL
    JULLENS, RA
    LOO, RY
    JONES, VL
    PERSECHINI, D
    PIKULSKI, JL
    JOHNSON, MM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (10) : 931 - 933
  • [9] Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
    Wang, X. D.
    Hu, W. D.
    Chen, X. S.
    Lu, W.
    Tang, H. J.
    Li, T.
    Gong, H. M.
    OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (14-15) : 1261 - 1266
  • [10] MONOLITHICALLY INTEGRATED RECEIVER FRONT END - IN0.53GA0.47AS P-I-N AMPLIFIER
    CHENG, CL
    CHANG, RPH
    TELL, B
    PARKER, SMZ
    OTA, Y
    VELLACOLEIRO, GP
    MILLER, RC
    ZILKO, JL
    KASPER, BL
    BROWNGOEBELER, KF
    MATTERA, VD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) : 1439 - 1444
12345