DISLOCATION CONFIGURATIONS INDUCED BY CYCLIC DEFORMATION IN SILICON-CRYSTALS

被引：1

作者：

NISHINO, Y ^{[1
]}

IMURA, T ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT MET,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期

关键词：

D O I：

10.1002/pssa.2210780233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：655 / 663

页数：9

共 50 条

[1] DISLOCATION CONFIGURATIONS CHARACTERISTIC OF DEFORMED CZOCHRALSKI-GROWN SILICON-CRYSTALS
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[2] DISLOCATION DYNAMICS IN THE PLASTIC-DEFORMATION OF SILICON-CRYSTALS .1. EXPERIMENTS
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[3] DISLOCATION BEHAVIOR AND MECHANICAL STRENGTHS OF FLOAT-ZONE SILICON-CRYSTALS AND CZOCHRALSKI SILICON-CRYSTALS
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[4] DISLOCATION GENERATION IN THE INITIATION OF FRACTURES IN SILICON-CRYSTALS
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[5] GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS
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[7] INSITU HVEM OBSERVATIONS OF DISLOCATION PROCESSES DURING HIGH-TEMPERATURE DEFORMATION OF SILICON-CRYSTALS
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[8] MODEL FOR DISLOCATION LOCKING BY OXYGEN GETTERING IN SILICON-CRYSTALS
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[9] INSITU HVEM OBSERVATIONS OF DISLOCATION PROCESSES DURING HIGH-TEMPERATURE DEFORMATION OF SILICON-CRYSTALS
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[10] DELAY OF DISLOCATION-MOTION STARTING IN SILICON-CRYSTALS
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