ANDERSON TRANSITION IN THE EXCITON-IMPURITY BAND IN SILICON

被引：0
作者：
ALTUKHOV, PD
IVANOV, AV
ROGACHEV, AA
机构：
来源：
JETP LETTERS | 1982年 / 36卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：401 / 404
页数：4
相关论文
共 50 条
[41]   Suppression of the virtual anderson transition in the impurity band of doped quantum well structures [J].
N. V. Agrinskaya ;
V. I. Kozub ;
D. S. Poloskin .
JETP Letters, 2011, 94 :116-120
[42]   Anderson impurity in a correlated conduction band [J].
Hofstetter, W ;
Bulla, R ;
Vollhardt, D .
PHYSICAL REVIEW LETTERS, 2000, 84 (19) :4417-4420
[43]   Kinetics of Low-Temperature Microphotoluminescence of Exciton-Impurity Complexes in CdZnTe Single Crystals [J].
Pruchkina, A. A. ;
Chentsov, S. I. ;
Krivobok, V. S. ;
Nikolaev, S. N. ;
Onishchenko, E. E. ;
Bagaev, V. S. ;
Skorikov, M. L. .
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2018, 45 (05) :131-135
[44]   Influence of the band shapes in the Anderson impurity model [J].
Jollet, F ;
Ortiz, V ;
Crocombette, JP .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1997, 86 (1-3) :83-92
[45]   EVIDENCE FOR LONG-RANGE EXCITON-IMPURITY INTERACTION IN TETRACENE-DOPED ANTHRACENE CRYSTALS [J].
POWELL, RC ;
KEPLER, RG .
PHYSICAL REVIEW LETTERS, 1969, 22 (13) :636-&
[46]   Symmetric Anderson impurity model with a narrow band [J].
Hofstetter, W ;
Kehrein, S .
PHYSICAL REVIEW B, 1999, 59 (20) :R12732-R12735
[47]   GENERATION OF FREE-EXCITONS AND EXCITON-IMPURITY COMPLEXES BY FAST ELECTRONS IN EXTREMELY ANISOTROPIC CRYSTALS [J].
KOZITSKII, SV ;
RACK, M .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 97 (01) :151-155
[48]   Virtual Anderson transition in a narrow impurity band of doped p-GaAs/AlGaAs layers [J].
N. V. Agrinskaya ;
V. I. Kozub ;
D. S. Poloskin .
JETP Letters, 2007, 85 :169-173
[49]   The destruction of the virtual Anderson transition in a narrow impurity band of doped quantum well structures. [J].
Agrinskaya, N. V. ;
Kozub, V. I. ;
Poloskin, D. S. .
14TH INTERNATIONAL CONFERENCE ON TRANSPORT IN INTERACTING DISORDERED SYSTEMS (TIDS-14), 2012, 376
[50]   Virtual Anderson transition in a narrow impurity band of doped p-GaAs/AlGaAs layers [J].
Agrinskaya, N. V. ;
Kozub, V. I. ;
Poloskin, D. S. .
JETP LETTERS, 2007, 85 (03) :169-173
12345