HIGHLY STABLE OPERATION OF ALGALNP/GALNP STRAINED MULTIQUANTUM WELL VISIBLE LASER-DIODES

被引：6
作者：
HASHIMOTO, J
KATSUYAMA, T
SHINKAI, J
YOSHIDA, I
HAYASHI, H
机构：
[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama 244, 1, Taya-cho
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 14期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19920844
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The long-term reliability of AlGaInP/GaInP strained multiquantum well (SMQW) lasers has been investigated. Highly stable operation with low operation current for more than 5500 h has been achieved under 50-degrees-C, 3 mW test conditions, without sudden or rapid failures due to strain induced defects. The estimated mean time to failure (MTTF) is 10 900 h, which is comparable to that of the conventional DH laser and long enough for practical use.
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页码：1329 / 1330
页数：2
相关论文
共 9 条
[1]   EFFECTS OF STRAINED-LAYER STRUCTURES ON THE THRESHOLD CURRENT-DENSITY OF ALGAINP/GAINP VISIBLE LASERS [J].
HASHIMOTO, J ;
KATSUYAMA, T ;
SHINKAI, J ;
YOSHIDA, I ;
HAYASHI, H .
APPLIED PHYSICS LETTERS, 1991, 58 (09) :879-880
[2]   ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
IKEDA, M ;
MORI, Y ;
SATO, H ;
KANEKO, K ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1027-1028
[3]   LONG-TERM RELIABILITY TESTS FOR INGAAIP VISIBLE LASER-DIODES [J].
ISHIKAWA, M ;
OKUDA, H ;
ITAYA, K ;
SHIOZAWA, H ;
UEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (09) :1615-1621
[4]   ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIKAWA, M ;
OHBA, Y ;
SUGAWARA, H ;
YAMAMOTO, M ;
NAKANISI, T .
APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208
[5]   VERY LOW THRESHOLD CURRENT ALGAINP/GAXIN1-XP STRAINED SINGLE QUANTUM-WELL VISIBLE LASER DIODE [J].
KATSUYAMA, T ;
YOSHIDA, I ;
SHINKAI, J ;
HASHIMOTO, J ;
HAYASHI, H .
ELECTRONICS LETTERS, 1990, 26 (17) :1375-1377
[6]   HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES [J].
KATSUYAMA, T ;
YOSHIDA, I ;
SHINKAI, J ;
HASHIMOTO, J ;
HAYASHI, H .
APPLIED PHYSICS LETTERS, 1991, 59 (26) :3351-3353
[7]   ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].
KOBAYASHI, K ;
KAWATA, S ;
GOMYO, A ;
HINO, I ;
SUZUKI, T .
ELECTRONICS LETTERS, 1985, 21 (20) :931-932
[8]   RELIABLE HIGH-POWER OPERATION OF INGAALP VISIBLE-LIGHT LASER-DIODES WITH STRAINED ACTIVE LAYER [J].
NITTA, K ;
ITAYA, K ;
NISHIKAWA, Y ;
ISHIKAWA, M ;
OKAJIMA, M ;
HATAKOSHI, G .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3862-3864
[9]   LOW THRESHOLD CURRENT-DENSITY (760 A/CM2) AND HIGH-POWER (45 MW) OPERATION OF STRAINED GA0.42IN0.58P MULTIQUANTUM WELL LASER-DIODES EMITTING AT 632 NM [J].
VALSTER, A ;
VANDERPOEL, CJ ;
FINKE, MN ;
BOERMANS, MJB .
ELECTRONICS LETTERS, 1992, 28 (02) :144-145
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