ANNEALING OF SELENIUM-IMPLANTED GAAS

被引：17

作者：

BARRETT, NJ ^{[1
]}

GRANGE, JD ^{[1
]}

SEALY, BJ ^{[1
]}

STEPHENS, KG ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.333916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3503 / 3507

页数：5

共 35 条

[1] APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ASBECK, PM ;

MILLER, DL ;

BABCOCK, EJ ;

KIRKPATRICK, CG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :81-84

[2] ELECTRON-BEAM ANNEALING OF ZINC IMPLANTED GAAS TO CONTROL PROFILE BROADENING [J].

BARRETT, NJ ;

SEALY, BJ .

ELECTRONICS LETTERS, 1984, 20 (04) :175-177

[3] AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS [J].

BENSALEM, R ;

BARRETT, NJ ;

SEALY, BJ .

ELECTRONICS LETTERS, 1983, 19 (03) :112-113

[4] DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

RAI, AK ;

PRONOKO, PP ;

NARAYAN, J ;

LING, SC ;

WILSON, SR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (01) :61-69

[5] FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

YEO, YK ;

RAI, AK ;

PARK, YS ;

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4821-4825

[6] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS [J].

BURKHARDT, PJ ;

MARVEL, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :864-+

[7] TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER [J].

CHAPMAN, RL ;

FAN, JCC ;

DONNELLY, JP ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :805-807

[8] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[9] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

FOXON, CT ;

HARVEY, JA ;

JOYCE, BA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

[10] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

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