ACTIVATION OF BORON IMPLANTED IN HG0.7CD0.3 TE BY HIGH-TEMPERATURE ANNEALING

被引：3
作者：
WU, TB
LAM, KY
CHIANG, CD
GONG, J
YANG, SJ
机构：
[1] NATL TSING HUA UNIV,ELECT ENGN,HSINCHU 300,TAIWAN
[2] CHUNG SHAN INST SCI & TECHNOL,LUNGTAN,TAIWAN
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期
关键词：
D O I：
10.1063/1.340444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4983 / 4988
页数：6
相关论文
共 21 条
[1]   BORON ION-IMPLANTATION IN HG1-XCDXTE [J].
BAARS, J ;
HURRLE, A ;
ROTHEMUND, W ;
FRITZSCHE, CR ;
JAKOBUS, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1461-1466
[2]   PARTIAL PRESSURES OF HG(G) AND TE2(G) IN HG-TE SYSTEM FROM OPTICAL DENSITIES [J].
BREBRICK, RF ;
STRAUSS, AJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) :989-&
[3]  
BROUDY RM, 1981, SEMICONDUCT SEMIMET, V18, P157
[4]   ION-IMPLANTATION STUDY OF HGCDTE [J].
BUBULAC, LO ;
TENNANT, WE ;
SHIN, SH ;
WANG, CC ;
LANIR, M ;
GERTNER, ER ;
MARSHALL, ED .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :495-500
[5]  
DEARNALEY G, 1973, ION IMPLANTATION, P476
[6]   INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE [J].
DESTEFANIS, GL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :171-175
[7]   ION-IMPLANTATION IN HG1-XCDXTE [J].
DESTEFANIS, GL .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :567-580
[8]   ADVANCES IN HG IMPLANTED HG1-XCDXTE PHOTOVOLTAIC DETECTORS [J].
FIORITO, G ;
GASPARRINI, G ;
SVELTO, F .
INFRARED PHYSICS, 1975, 15 (04) :287-293
[9]   TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J].
FOYT, AG ;
HARMAN, TC ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1971, 18 (08) :321-&
[10]   LIFETIME AND CARRIER-CONCENTRATION PROFILE OF B+-IMPLANTED P-TYPE HGCDTE [J].
FRAENKEL, A ;
SCHACHAM, SE ;
BAHIR, G ;
FINKMAN, E .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :3916-3922
123