OPERATION OF ITO-SI HETEROJUNCTION SOLAR-CELLS

被引：29

作者：

MIZRAH, T

ADLER, D

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

[2] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[3] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 10期

关键词：

D O I：

10.1063/1.88901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：682 / 684

页数：3

共 10 条

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J].

ANDERSON, RL .

APPLIED PHYSICS LETTERS, 1975, 27 (12) :691-693

[2]

ANDERSON RL, NSFRANNSEAER7417631P

[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[4]

DUBOW JB, 1975, IEEE IEDM TECH DIG, P230

[5] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J].

FAN, JCC ;

BACHNER, FJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1719-1725

[6] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J].

FRASER, DB ;

COOK, HD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1368-&

[7]

MIZRAH T, 1976, THESIS MIT

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[9]

VAINSHTEIN VM, 1967, SOV PHYS SEMICOND+, V1, P104

[10]

Wolf H. F, 1969, SILICON SEMICONDUCTO

← 1 →